Design of a ternary memory cell using cntfets

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August undefined, 2024

WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional binary logic because it allows simplicity and energy efficiency in modern digital design due to the reduced circuit overhead in interconnects and chip area. WebA memory cell is designed for the construction of a ternary random-access-memory array (TRAM). A ternary decoder and encoder are presented to be the elements of a complete ternary read-only memory (TROM). A modified ternary inverter (MTI) is taken as a unit cell of the ternary memory matrix.

An SEU-hardened ternary SRAM design based on efficient ternary C-ele…

WebJun 1, 2016 · Two ternary CNTFET SRAM cells (denoted as TC SRAM1 and TC SRAM2) are initially proposed in this paper to address these concerns; features such as sizing, SNM (Static Noise Margin), Power Delay Product (PDP) and write/read times are considered [16]. WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … sims 2 completo torrent download

An SEU-hardened ternary SRAM design based on efficient ternary …

WebApr 1, 2015 · In this Letter, we have presented a DCAM cell capable of ternary logic storage using four CNT transistors (CNTFETs). We have shown using SPICE … WebA novel hybrid cache replacement and migration policy is proposed; a hybrid macrocell is also designed using a different number of eDRAM, PCM … WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … sims 2 cotton candy curls

Low storage power and high noise margin ternary memory cells …

Metallic tube‐tolerant ternary dynamic content‐addressable …

WebThe CNTFET used for design has different threshold voltages to achieve ternary logic. This multi threshold voltage is obtained by varying the diameter of the CNT used. Chirality of the CNTFETs is utilized for varying the diameter of the CNT and it also avoids the usage of additional power supplies. The channel length used here is 18nm wide. WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … rb-101txWebApr 24, 2024 · Using carbon nanotube field effect transistors, (CNTFETs) the MVL gates are made which use N-type CNTFETs without utilizing any resistor. Thus this work helps both ternary and also quaternary logic gates exploiting the threshold voltages of both P and N type transistors. rb1280 battery

"WebThis paper presents a novel design of ternary Static Read Access Memory (SRAM) using Carbon Nano-tube Field Effect Transistors (CNTFETs). Advantages of CNTFET … " - Design of a ternary memory cell using cntfets

Design of a ternary memory cell using cntfets

A Novel Design of Ternary Level SRAM cell using CNTFET

WebFeb 22, 2024 · A TCAM cell with an optimized CNTFET is proposed in this paper. The TCAM cell proposed is designed for improved performance using optimized CNTFET … WebApr 7, 2024 · However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access memory (8T SRAM) cell. The leakage power of the proposed cell is reduced by 2.21 × compared to conventional 6T SRAM at 0.3 V with similar CNTFET parameters.

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WebDesign of a ternary memory cell using CNTFETs. S Lin, YB Kim, F Lombardi. IEEE transactions on nanotechnology 11 (5), 1019-1025, 2012. 156: 2012: Design of a CNTFET-based SRAM cell by dual-chirality selection. S Lin, YB Kim, F Lombardi. IEEE Transactions on Nanotechnology 9 (1), 30-37, 2009. 114: WebApr 7, 2024 · However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access …

WebFeb 28, 2011 · In this paper, a novel design of a ternary memory cell based on CNTFETs is proposed; this cell uses a transmission gate for the write operation and a buffer for the read operation to make them separate. Chirality of the CNTFETs is utilized for threshold voltage control, thus avoiding the use of additional power supplies. WebFeb 27, 2015 · Activities and Societies: WORK ON DESIGN OF TERNARY MEMORY USING CNTFET PUBLISHED PAPER IN IEEE CONFERENCE ICECS-2015. MASTERS IN VLSI AND EMBEDDED SYSTEM DESIGN GOVT. ENGG. COLLEGE, RAJKOT

WebCarbon nanotube-based transistors (CNTFETs) have been shown to exhibit ambipolar field-effect transistor behavior, allowing circuit designers to easily choose between n - and p-conduction channels by applying correct voltages at a polarity gate.In this paper, we explore this ambipolar behavior of the CNTFET to design both binary and ternary content … WebOct 26, 2024 · The ternary logic is observed to be a better alternative to the traditional binary logic because it offers faster computations, smaller chip area, and lesser interconnects. Thus, it allows designing the low-complex, high-speed, and energy-efficient circuits in future digital design.

WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to …

WebJan 1, 2024 · This paper proposes a novel SEU-hardened ternary SRAM (TSRAM) cell based on an efficient ternary C-element (TC-element). The proposed design uses one supply voltage and dual-threshold CNTFETs, while the previous CNTFET-based TSRAMs need three different threshold voltages or two supply voltages. rb-122e low water cut-offWebJan 27, 2024 · This paper presents the design of a CNFET-based ternary content-addressable memory (TCAM) cell and rigorously analyzes its performance in terms of power–delay product (PDP) and static noise margin (SNM). The effect of variations of the chiral vector on the performance of the TCAM cell is also comprehensively investigated. rb1290x2b cyberpower batteryWebJan 1, 2024 · A ternary content-addressable memory cell using carbon nanotube field-effect transistors (CNTFETs) is presented in this paper. The proposed ternary CAM cell … rb 12/24 relayWebJan 24, 2024 · In addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance ... rb1290 cyberpower batteryWebOct 26, 2024 · In ternary logic, the CNTFET-based memory cell is designed in . In this design, a buffer is applied for read operation while the transmission gate is utilised for … rb1290 replacement batteryWebThis paper presents a novel design of ternary Static Read Access Memory (SRAM) using Carbon Nano-tube Field Effect Transistors (CNTFETs). Advantages of CNTFET technology along with a brief discussion on Stanford university model of CNTFET used for simulation of SRAM are discussed. sims 2 conversion databaseWebThis paper presents a design of a 3VL memory cell using carbon nano-tube field-effect transistors (CNTFETs). 3VL is a promising alternative to conventional binary logic, as it has better performance in terms of area, power and also reduces interconnect delay. This cell uses a control gate for the write and read operation to make them separate. sims 2 console neighborhood